10 Stück Hochspannungsdiode JB99T Fast Recovery 20mA20kV High Voltage Silizium,
19,72 €
Device model JB99T (20mA 20kV 100nS). P/N junction capacitance CJ at 25°C; VR =0V; f=1MHz 1. Device junction temperature TJ 125 °C. Reverse DC current IR 1 at 25°C; VR =V RRM 2 uA. Reverse DC current IR 2 at 100°C; VR =V RRM 20 uA.
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