Hf-basierte High-k Dielektrika: Prozessentwicklung, Leistungscharakterisierung...
50,51 €
Dynamic stressing has also been used. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm).
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