Si Detectors and Characterization for HEP and Photon Science Experiment: How to
114,29 €
T-CAD Simulation for the designing of detectors. - CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS. The book is intended for researchers and master's level students with an understanding of radiation detector physics.
Jetzt bei Ebay: